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柏良
教授/所長
Po-Liang Liu
專任教師
重要經歷
現職:國立中興大學精密工程研究所教授兼所長108.8~
經歷:
國立中興大學精密工程研究所教授 104.8~
國立中興大學精密工程研究所副教授 101.2~104.7
國立中興大學精密工程研究所助理教授 97.8~101.1
國立中興大學精密工程研究所專案助理教授 95.8~97.7
美國亞利桑那州立大學天文及物理系博士後副研究員93.7~95.6
經濟部礦務局薦任礦場監督員 85.7~95.8
考試:
84年全國性公務人員高等考試冶金工程科及格
91年博士後研究人員公費留學考試工程學群及格
研究領域
1. II-VI、III-V、IV- IV族量子結構之物理特性研究。
2. 具犧牲層藍光二極體之磊晶成長技術開發。
3. 新穎IV族紅外線雷射及奈米光學元件研究。
4. 磊晶結構設計與分析。
5. 奈米物性之理論研究。
 
 
 
A.期刊論文
  1. Po-Liang Liu* and Kuo-Cheng Liao, “Accommodation at the interface of highly dissimilar GaN(0001)/Sc2O3(111) heteroepitaxial systems,” Scripta Materialia, vol.68, pp.211, 01 2013. (SCI)
  2. Ming-Hsien Lee, Po-Liang Liu*, Yung-An Hong, Yen-Ting Chou, Jia-Yang Hong, and Yu-Jin Siao, “Electronic band structures of Ge1−xSnx semiconductors: A first–principles density functional theory study,” Journal of Applied Physics, vol.113, pp.063517, 02 2013. (SCI)
  3. Po-Liang Liu* and Peng-Tsang Shao, “Electronic structure and band gap engineering of ZnO–based semiconductor alloy films,” Molecular Simulation, vol.DOI:10.1080/08927022.2013.7891, 04 2013. (SCI)
  4. Po-Liang Liu*, Yen-Ting Chou, and Jia-Yang Hong, “Valence–Band Offset of m–Plane GaN(1100) Films Grown on LiAlO2(100) Substrates,” Applied Physics Express, vol.6, pp.071001, 05 2013. (SCI)
  5. Po-Liang Liu* and Jia-Yang Hong, “Double–shell C60@C240 Fullerenes with Stone–Wales Defects for Hydrogen Storage: An ab–initio Study,” Journal of Applied Physics, vol.114, pp.114301, 06 2013. (SCI)
  6. Ming-Shiou Lin, Chia-Feng Lin*, Wan-Chun Huang, Guei-Miao Wang, Bing-Cheng Shieh, Jing-Jie Dai, Shou-Yi Chang, D. S. Wuu, Po-Liang Liu, and Ray-Hua Horng, “Chemical–Mechanical Lift-Off Process for InGaN Epitaxial Layers,” Applied Physics Express, vol.4, pp.062101, 01 2011. (SCI)
  7. Po-Liang Liu* and Yu-Jin Siao, “Ab initio study on preferred growth of ZnO,” Scripta Materialia, vol.64, pp.483-485, 01 2011. (SCI)
  8. Po-Liang Liu*, Yu-Jin Siao, Yen-Ting Wu, Chih-Hao Wang and Chien-Shun Chen, “Structural, electronic and energetic properties of GaN[0001]/Ga2O3[100] heterojunctions: A first-principles density functional theory study,” Scripta Materialia, vol.65, pp.465-468, 05 2011. (SCI)
  9. Yu-Jin Siao, Po-Liang Liu*, and Yen-Ting Wu, “Ab initio Study of Atomic Hydrogen on ZnO Surfaces,” Applied Physics Express, vol.4, pp.125601, 11 2011. (SCI)
  10. Po-Liang Liu, “Highly Strained Metastable Heterojunction between Wurtzite GaN(0001) and Cubic CrN(111),” Journal of The Electrochemical Society, vol.157, pp.D577-D581, 09 2010. (SCI)
  11. Yu-Li Tsai, Ray-Hua Horng*, Ming-Chun Tseng, Chia-Hao Kuo, Po-Liang Liu, Dong-Sing Wuu, and Der-Yuh Lin, “Phase separation phenomenon in MOCVD–grown GaInP epitaxial layers,” Journal of Crystal Growth, vol.311, pp.3220, 04 2009. (SCI)
  12. Yu-Li Tsai, Ray-Hua Horng*, Po-Liang Liu, Ming-Chun Tseng, Der-Yuh Lin, Dong-Sing Wuu, and Xinhe Zheng, “Elimination of phase separation in MOCVD–grown GaInP epilayers by compositionally step–graded Ga1–xInxP multilayers,” Journal of Applied Physics, vol.106, pp.063517, 09 2009. (SCI)
  13. Po-Liang Liu, A. V. G. Chizmeshya, and John Kouvetakis, “Structural, electronic, and energetic properties of SiC[111]/ZrB2[0001] heterojunctions:A first-principles density functional theory study,” Physical Review B, vol.77, no.3, pp.035326, 01 2008. (SCI)
  14. Po-Liang Liu, “The Relation Between the Distribution of Dihedral Angels and the Wetting Angle during Liquid Phase Sintering,” Computational Materials Science, vol.36, no.4, pp.468-473, 05 2006. (SCI)
  15. Rahul Trivedi, Po-Liang Liu, Radek Roucka, John Tolle, A.V.G. Chizmeshya, I. S. T. Tsong and J. Kouvetakis, “Mismatched Heteroepitaxy of Tetrahedral Semiconductors with Si via ZrB2 Templates,” Chemistry of Materials, vol.17, no.18, pp.4647-4652, 06 2005. (SCI)
  16. Po-Liang Liu, A. V. G. Chizmeshya, John Kouvetakis, and Ignatius S. T. Tsong, “First-Principles Studies of GaN(0001) Heteroepitaxy on ZrB2(0001),” Physical Review B, vol.72, pp.245335, 11 2005. (SCI)
  17. Z. T. Wang, Y. Yamada-Takamura, Y. Fujikawa, T. Sakurai, Q. K. Xue, J. Tolle, P.-L. Liu, A. V. G. Chizmeshya, J. Kouvetakis, and I.S.T. Tsong, “Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers,” Physical Review Letters, vol.95, pp.266105, 12 2005. (SCI)